NTMFS4926N
Power MOSFET
30 V, 44 A, Single N ? Channel, SO ? 8 FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Optimized for 5 V, 12 V Gate Drives
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
7.0 m W @ 10 V
11.2 m W @ 4.5 V
D (5,6)
I D MAX
44 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G (4)
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA ≤ 10 s
(Note 1)
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
I D
P D
I D
15.5
9.8
2.70
23.4
14.8
A
W
A
S (1,2,3)
N ? CHANNEL MOSFET
MARKING
DIAGRAM
D
Power Dissipation
R q JA ≤ 10 s (Note 1)
Continuous Drain
Current R q JA
(Note 2)
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
P D
I D
6.13
9.0
5.7
W
A
1
SO ? 8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
4926N
AYWZZ
D
D
D
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
T A = 25 ° C
T C = 25 ° C
T C =100 ° C
T C = 25 ° C
P D
I D
P D
0.92
44
28
21.6
W
A
W
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Pulsed Drain
Current
T A = 25 ° C, t p = 10 m s
I DM
182
A
ORDERING INFORMATION
Current Limited by Package T A = 25 ° C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 24 V, V GS = 20 V,
I L = 21 A pk , L = 0.1 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I Dmax
T J ,
T STG
I S
dV/d t
E AS
T L
100
? 55 to
+150
21
6.0
22
260
A
° C
A
V/ns
mJ
° C
Device Package Shipping ?
NTMFS4926NT1G SO ? 8 FL 1500 /
(Pb ? Free) Tape & Reel
NTMFS4926NT3G SO ? 8 FL 5000 /
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 5
1
Publication Order Number:
NTMFS4926N/D
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相关代理商/技术参数
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NTMFS4927NCT3G 功能描述:MOSFET N-CH 30V SO8-FL RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
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